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| Switching Diodes MA3S132D Silicon epitaxial planar type 0.28 0.05 For switching circuits I Features * Short reverse recovery time trr * Small terminal capacitance, Ct * Super-small SS-mini type package contained two elements, allowing high-density mounting 1.60 - 0.03 0.80 0.80 0.51 0.51 0.80 1.60 0.1 0.80 0.05 Unit : mm 1 + 0.05 3 2 0.28 0.05 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 150 225 340 500 750 150 -55 to +150 Unit V V mA 0.60 - 0.03 0.44 0.44 + 0.05 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 SS-Mini Type Package (3-pin) 0.88 - 0.03 mA Marking Symbol: MO mA C C Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 15 10 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.12 - 0.02 + 0.05 + 0.05 I Absolute Maximum Ratings Ta = 25C 0.28 0.05 1 MA3S132D IF V F 103 104 Ta = 150C 102 103 Switching Diodes IR V R 1.6 1.4 VF Ta Forward current IF (mA) Reverse current IR (nA) Forward voltage VF (V) 1.2 1.0 0.8 IF = 100 mA 0.6 0.4 0.2 10 mA 3 mA 100C 102 25C 10 10 1 Ta = 150C 100C 25C 10-1 - 20C 1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 10-1 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 104 VR = 75 V 7 8 Ct VR f = 1 MHz Ta = 25C 1 000 300 IF(surge) tW Ta = 25C IF(surge) Non repetitive tW Terminal capacitance Ct (pF) 103 35 V 6V Reverse current IR (nA) 6 5 4 3 2 1 Forward surge current IF(surge) (A) 0 20 40 60 80 100 120 100 30 10 3 1 0.3 0.1 0.03 102 10 1 10-1 -40 0 40 80 120 160 200 0 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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